CS1N60A23H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche ene.
Power switch circuit of adaptor and charger.
Absolute（TA= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
V.
VDSS
600
CS1N60 A23H, the silicon N-channel Enhanced ID
0.8
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
3
which reduce the conduction loss, improve switching
RDS(ON)Typ
11
performance and enhance the avalanche .
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